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| PD - 94602 IRF7828 HEXFET(R) Power MOSFET for DC-DC Converters * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7828 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7828 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. S G 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7828 RDS(on) QG Qsw Qoss 9.5m 9.2nC 3.7nC 6.1nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TL = 70C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TL = 70C IDM PD Symbol VDS VGS ID IRF7828 30 20 13.6 11 100 2.5 1.6 -55 to 150 3.1 100 C A W A Units V 12/5/02 IRF7828 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS Min 30 - 1.0 - - IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss (off) Typ - 9.5 - - - - 9.2 7.3 2.5 0.8 2.9 3.7 6.1 2.3 6.3 2.7 9.7 7.3 1010 360 110 Max - 12.5 - 1.0 150 100 14 - - - - - - - - - - - - - - Units V m V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 10A VDS = VGS,I D = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 125C VGS = 20V VGS= 5.0V, ID=15A, VDS=16V VGS = 5V, VDS< 100mV VDS = 15V, ID = 10A Current* A nA Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance - - - - - - - - - - - - - - - - nC VDS = 10V, VGS = 0 VDD = 15V, ID = 10A ns VGS = 4.5V Clamped Inductive Load pF VDS = 15V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) Min - - Typ - 13 Max 1.0 - Units V nC Conditions IS = 10A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A - 13 - nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS measured at VGS = 5.0V, IF = 10A. 2 www.irf.com IRF7828 2.0 12 ID = 14A VGS = 10V RDS(on) , Drain-to-Source On Resistance ID= 10A VGS , Gate-to-Source Voltage (V) 10 VDS= 24V VDS= 15V 1.5 8 (Normalized) 6 1.0 4 2 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0 5 10 15 20 T J , Junction Temperature (C) Q G Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage RDS(on) , Drain-to -Source On Resistance (m ) 20 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 15 C, Capacitance (pF) 1000 Ciss Coss ID = 14A 10 100 Crss 5 2 4 6 8 10 10 1 10 100 VGS, Gate -to -Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3 IRF7828 100.0 100.0 T J = 150C ID, Drain-to-Source Current () ISD, Reverse Drain Current (A) 10.0 10.0 T J = 150C T J = 25C 1.0 1.0 T J = 25C VGS = 0V 0.1 0.0 0.5 1.0 1.5 VDS = 15V 20s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) VSD, Source-toDrain Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7828 SO-8 Package Details D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0.10 (.004) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 -CB 8X 0.25 (.010) NOTES: 1. 2. 3. 4. A1 M CASBS L RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X SO-8 Part Marking www.irf.com 5 IRF7828 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/02 6 www.irf.com |
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